PART |
Description |
Maker |
BA128210 BA1283-TR3 |
Band Switching Diodes DIODE SILICON, VHF BAND, MIXER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Siliconix Vishay Semiconductors
|
MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
DA6X103T |
SILICON, VHF BAND, MIXER DIODE
|
PANASONIC CORP
|
BA483153 BA483136 BA482143 |
SILICON, VHF BAND, MIXER DIODE, DO-34
|
NXP SEMICONDUCTORS
|
CDB7619-000 |
SILICON, LOW BARRIER SCHOTTKY, VHF-mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
ADN9001-91 AMM9001-91 ADN3002-23 ADN3002-51 ADN300 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
|
ADVANCED SEMICONDUCTOR INC
|
MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
MMVL3102T1 MMVL3102T1_06 MMVL3102T1G MMVL3102T106 |
Silicon Tuning Diode VHF BAND, 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
|
ONSEMI[ON Semiconductor]
|
1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
NTE112 |
SILICON, UHF BAND, MIXER DIODE, DO-35 Silicon Small Signal Schottky Diode
|
NTE[NTE Electronics]
|
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